1.

Conference Proceedings
Conference Proceedings
1. Power Limitation Due to Premature Breakdown in AlGaN/GaN HFETs
Gradinaru, G. ; Kao, N. C. ; Yang, J. ; Chen, Q. ; Khan, M. A. ; Sudarshan, T. S.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.77-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
2.

Conference Proceedings
Conference Proceedings
2. Bulk Breakdown in AlGaN/GaN HFETs
Gradinaru, G. ; Kao, N. C. ; Gaska, R. ; Yang, J. ; Chen, Q. ; Khan, M. A. ; Sudarshan, T. S.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.309-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512