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15 results

Conference Proceedings

1. Effect of the Metal Composition on the Electrical and Thermal Properties of Au/Pd/Ti/Pd Contacts to p-Type SiC

Kolaklieva, L. ; Kakanakov, R. ; Marinova, T. ; Lepoeva, G.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.749-752, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

2. The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection

Sarov, G. ; Cholakova, T. ; Kakanakov, R.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.769-772, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

3. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

Kakanakov, R. ; Kassamakova, L. ; Hristeva, N. ; Lepoeva, G. ; Kuznetsov, N. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.917-920, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC

Kassamakova, L. ; Kakanakov, R. ; Yakimova, R. ; Kakanakova-Georgieva, A. ; Syvaejaervi, M. ; Wilzen, L. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.929-932, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Origin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiC

Kassamakova, L. ; Kakanakov, R. ; Kassamakov, I. ; Zekentes, K. ; Tsagaraki, K. ; Atanasova, G.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.251-254, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

6. Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices

Kassamakova, L. ; Kakanakov, R. ; Kassamakov, I. ; Nordell, N. ; Savage, S. ; Svedberg, E. B. ; Madsen, L. D.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1009-1012, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

7. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

Sarov, G. ; Kakanakov, R. ; Cholakova, T. ; Kassamakova, L. ; Hristeva, N. ; Lepoeva, G. ; Philipova, P. ; Kuznetsov, N. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.929-932, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

8. Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC

Kassamakova, L. ; Kakanakov, R. ; Yakimova, R. ; Kakanakova-Georgieva, A. ; Syvajarvi, M. ; Wilzen, L. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.929-932, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

Kakanakov, R. ; Kassamakova, L. ; Hristeva, N. ; Lepoeva, G. ; Kuznetsov, N. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.917-920, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

Kuznetsov, N. ; Bauman, D. ; Gavrilin, A. ; Kassamakova, L. ; Kakanakov, R. ; Sarov, G. ; Cholakova, T. ; Zekentes, K. ; Dmitriev, V.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.867-870, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

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Author: Kakanakov, R.