1.

Conference Proceedings
Conference Proceedings
1. Photoluminescence Spectra from Acceptor-Doped GaAs and InP having Extremely Low Background Concentration of Donor Impurities: Formation of Novel Emissions
Yoshinaga, H. ; Makita, Y. ; Iida, T. ; Yamada, A. ; Winter, S. ; Kimura, S. ; Niki, S. ; Obara, A. ; Oda, O. ; Kainosho, K. ; Uekusa, S. ; Matsumori, T.
Pub. info.: Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII).  pp.75-85,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-10
2.

Conference Proceedings
Conference Proceedings
2. Growth of homoepitaxial GaN layers and GaN/AIGaN multiple quantum wells on GaN single-crystal substrates by molecular-beam epitaxy
Kubo, S. ; Tanabe, T. ; Konishi, M. ; Iwata, S. ; Saimei, T. ; Kurai, S. ; Taguchi, T. ; Kainosho, K. ; Yokohata, A.
Pub. info.: Solid state lighting II : 9-11 July, 2002, Seattle, Washington, USA.  pp.97-104,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4776
3.

Conference Proceedings
Conference Proceedings
3. SEMI-INSULATING BEHAVIOR OF UNDOPED InP
Kainosho, K. ; Oda, O. ; Hirt, G. ; Muller, G.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.101-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325