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10 results

Conference Proceedings

1. Optical spectroscopy and symmetry of NdGaO3

Savytskii,D.I. ; Sugak,D.Yu. ; Suchocki,A. ; Matkovskii,A.O. ; Savytskii,I.V. ; Dzhala,V.I. ; Kaczor,P.

Pub. info.:	Solid state crystals, growth and characterization : 7-11 October 1996, Zakopane, Poland. pp.283-286, 1997. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3178

Conference Proceedings

2. Laplace transform DLTS studies of the DX centers in GaSb and AlGaAs

Dobaczewski,L. ; Hawkins,I.D. ; Kaczor,P. ; Missous,M. ; Poole,I. ; Peaker,A.R.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.769-774, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

3. Raman and IR spectroscopy investigations of double tungstates

Borowiec,M.T. ; Szymczak,H. ; Zateski,M. ; Kaczor,P. ; Adamowicz,L. ; Strzeszewski,J. ; Watterich,A. ; Kovacs,L.

Pub. info.:	Single crystal growth, characterization, and applications : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland. pp.288-291, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3724

Conference Proceedings

4. Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs

Kaczor,P. ; Zytkiewicz,Z.R. ; Dobaczewski,L.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1091-1096, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

5. Energy States of Ni and Band Offsets in Zn1-xCdxSe(Ni)and ZnSxSe1-x(Ni)Alloys

Surkova,T.P. ; Giriat,W. ; Godlewski,M. ; Kaczor,P. ; Surma,M. ; Permogorov,S.A. ; Tenishev,L.N.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.749-754, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

6. A New Bistable Shallow Thermal Donor in Al-Doped Si

Kaczor,P. ; Godlewski,M. ; Gregorkiewicz,T.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1185-1190, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

7. Polaron coupling for sulphur impurity in GaSb

Kaczor,P. ; Zakrzewski,A. ; Dobaczewski,L. ; Kalinski,Z. ; Gerrits,A.M. ; Perenboom,J.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1241-1246, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

8. Formation kinetics of the Al-related shallow thernral donors:a probe for oxygen diffusion in silicon

Kaczor,P. ; Dobaczewski,L. ; Gregorkiewicz,T. ; Ammerlaan,C.A.J.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part3 pp.1761-1766, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

9. Static and Dynamic Absorption Measurements of the DX Center in AlxGa1-xAs

Kaczor,P. ; Zyikiewicz,Z.R. ; Dobaczewski,L. ; Godlewski,M. ; Mandray,A. ; Huant,S. ; Portal,J.-C.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1093-1098, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

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Conference Proceedings

10. Fine Structure Observed in Thermal Emission Process for the EL2 Defect in GaAs

Dobaczewski,L. ; Kaczor,P. ; Peaker,A.R.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1001-1006, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

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Author: Kaczor,P.