1.

Conference Proceedings
Conference Proceedings
1. Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation
E. Escobedo-Cousin ; K. Vassilevski ; T. Hopf ; N. Wright ; A. O'Neill
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.121-124,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
K. Zekentes ; K. Vassilevski ; A. Stavrinidis ; G. Konstantinidis ; M. Kayambaki
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.913-916,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts
K. Vassilevski ; I.P. Nikitina ; A.B. Horsfall ; N.G. Wright ; A.J. Smith
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.670-673,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. Applications-Based Design of SiC Technology
N.G. Wright ; C.M. Johnson ; A.B. Horsfall ; C. Buttay ; K. Vassilevski
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.919-924,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. Silicon Carbide Vertical JFET Operating at High Temperature
K. Vassilevski ; K.P. Hilton ; N.G. Wright ; M.J. Uren ; A.G. Munday
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1063-1066,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
6.

Conference Proceedings
Conference Proceedings
6. Silicon Nitride Encapsulation to Preserve Ohmic Contacts Characteristics in High Temperature, Oxygen Rich Environments
S.K. Roy ; K. Vassilevski ; N.G. Wright ; A.B. Horsfall
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.420-423,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
7.

Conference Proceedings
Conference Proceedings
7. Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices
K. Vassilevski ; S.K. Roy ; N. Wood ; A.B. Horsfall ; N.G. Wright
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.411-415,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
8.

Conference Proceedings
Conference Proceedings
8. High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
K. Vassilevski ; I. Nikitina ; A. Horsfall ; N.G. Wright ; A.G. O'Neill ; K.P. Hilton ; A.G. Munday ; A.J. Hydes ; M.J. Uren ; C.M. Johnson
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.873-876,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
9.

Conference Proceedings
Conference Proceedings
9. Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms
E. Escobedo-Cousin ; K. Vassilevski ; T. Hopf ; N. Wright ; A.G. O'Neill
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1162-1165,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
10.

Conference Proceedings
Conference Proceedings
10. Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC
T. Hopf ; K. Vassilevski ; E. Escobedo-Cousin ; N. Wright ; A.G. O'Neill
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1154-1157,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780