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11 results

Conference Proceedings

1. Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes

K. Kamei ; L. Guo ; K. Momose ; H. Osawa

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.213-216, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

2. Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

T. Yamashita ; K. Momose ; D. Muto ; Y. Shimodaira ; K. Yamatake

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.363-366, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

3. Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers

T. Yamashita ; H. Matsuhata ; T. Sekiguchi ; K. Momose ; H. Osawa

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.173-176, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

4. Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate

K. Momose ; M. Odawara ; Y. Tajima ; H. Koizumi ; D. Muto

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.115-118, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

5. Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

T. Yamashita ; H. Matsuhata ; Y. Miyasaka ; K. Momose ; T. Sato

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.374-377, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

6. Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy

T. Yamashita ; H. Matsuhata ; Y. Miyasaka ; M. Odawara ; K. Momose

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.585-588, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

7. 4×10¹⁴ cm^-3) 4H-SiC Epilayers

K. Fukada ; N. Ishibashi ; Y. Miyasaka ; A. Bandoh ; K. Momose ; H. Osawa

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.83-86, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

Conference Proceedings

8. High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices

N. Ishibashi ; K. Fukada ; A. Bandoh ; K. Momose ; H. Osawa

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.55-58, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

Conference Proceedings

9. Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate

L. Guo ; K. Kamei ; K. Momose ; H. Osawa

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.39-42, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

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Conference Proceedings

10. Improvement of Quality of Thick 4H-SiC Epilayers

A. Miyasaka ; K. Kojima ; K. Momose ; H. Osawa ; H. Okumura

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.59-62, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

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Author: K. Momose