1.

Conference Proceedings
Conference Proceedings
1. The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC
I. Pintilie ; L.S. Lovlie ; K. Irmscher ; G. Wagner ; B.G. Svensson
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.369-372,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
2.

Conference Proceedings
Conference Proceedings
2. Proof of Interstitial Cobalt Defects in Silicon Float Zone Crystals Doped during Crystal Growth
H. Lemke ; K. Irmscher
Pub. info.: High purity silicon 9.  pp.299-312,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(4)
3.

Conference Proceedings
Conference Proceedings
3. Influence of Growth Conditions on Irradiation Induced Defects in 4H-SiC
I. Pintilie ; K. Irmscher ; U. Grossner ; B.G. Svensson ; B. Thomas
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.461-464,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
4.

Conference Proceedings
Conference Proceedings
4. P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)
G. Wagner ; M. Schmidbauer ; K. Irmscher ; P. Tanner ; R. Fornari
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.165-168,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617