1.

Conference Proceedings
Conference Proceedings
1. Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
H. Uehigashi ; K. Fukada ; M. Ito ; I. Kamata ; H. Fujibayashi
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.173-176,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate
A. Miyasaka ; J. Norimatsu ; K. Fukada ; Y. Tajima ; Y. Kageshima
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.193-196,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
3.

Conference Proceedings
Conference Proceedings
3. Step-Bunching Free and 30 µm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
A. Miyasaka ; J. Norimatsu ; K. Fukada ; Y. Tajima ; D. Muto
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.197-200,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. 4×1014 cm-3) 4H-SiC Epilayers
K. Fukada ; N. Ishibashi ; Y. Miyasaka ; A. Bandoh ; K. Momose ; H. Osawa
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.83-86,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
5.

Conference Proceedings
Conference Proceedings
5. High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
N. Ishibashi ; K. Fukada ; A. Bandoh ; K. Momose ; H. Osawa
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.55-58,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897