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12 results

Conference Proceedings

1. Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching

H. Hara ; Y. Sano ; H. Mimura ; K. Arima ; A. Kubota ; K. Yagi ; J. Murata ; K. Yamauchi

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.749-752, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. Polishing Characteristics of 4H-SiC Si-Face and C-Face by Plasma Chemical Vaporization Machining

Y. Sano ; M. Watanabe ; K. Yamamura ; K. Yamauchi ; T. Ishida ; K. Arima ; A. Kubota ; Y. Mori

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.757-762, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

3. High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

B.V. Pho ; S. Sadakuni ; T. Okamoto ; R. Sagawa ; K. Arima

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.873-876, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

4. Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy

X. Wu ; J. Uchikoshi ; T. Hirokane ; R. Yamada ; K. Arima

Pub. info.:	Analytical and diagnostic techniques for semiconductor materials, devices and processes 7. pp.173-182, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(3)

Conference Proceedings

5. Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching

T. Okamoto ; Y. Sano ; K. Tachibana ; K. Arima ; A.N. Hattori

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.493-495, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

6. TEM Observation of 8 Deg Off-Axis 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching

S. Sadakuni ; N.X. Dai ; Y. Sano ; K. Arima ; K. Yagi

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.489-492, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

7. Damage-Free Planarization of 2-Inch 4H-SiC Wafer Using Pt Catalyst Plate and HF Solution

T. Okamoto ; Y. Sano ; H. Hara ; K. Arima ; K. Yagi

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.835-838, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

8. Photodetection Characteristics of SnO₂-Ultrathin SiO₂-Si Structures

M. Chikamoto ; H. Hashimoto ; K. Horikoshi ; A. Shinozaki ; S. Morita ; K. Arima ; J. Uchikoshi ; M. Morita

Pub. info.:	Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5. pp.97-102, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(1)

Conference Proceedings

9. Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching

T. Okamoto ; Y. Sano ; H. Hara ; T. Hatayama ; K. Arima

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.775-778, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

10.

Conference Proceedings

10. Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride

S. Sadakuni ; J. Murata ; K. Yagi ; Y. Sano ; K. Arima

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.795-798, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

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Author: K. Arima