1.

Conference Proceedings
Conference Proceedings
1. MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers
A. Salinaro ; K. Alassaad ; D. Peters ; P. Friedrichs ; G. Ferro
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.512-515,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors
K. Alassaad ; F. Cauwet ; D. Carole ; V. Soulière ; G. Ferro
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.323-326,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. Preliminary Study on the Effect of Micrometric Ge-Droplets on the Characteristics of Ni/4H-SiC Schottky Contacts
M. Vivona ; F. Giannazzo ; K. Alassaad ; V. Soulière ; G. Ferro
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.424-427,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
K. Alassaad ; V. Soulière ; M. Vivona ; F. Giannazzo ; F. Roccaforte
Pub. info.: HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France.  pp.27-32,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 806
5.

Conference Proceedings
Conference Proceedings
5. Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate
K. Alassaad ; V. Soulière ; B. Doisneau ; F. Cauwet ; H. Peyre
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.187-192,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
6.

Conference Proceedings
Conference Proceedings
6. Behavior and Chemical Reactions of Liquid Si and Ge on SiC Surface
K. Alassaad ; V. Soulière ; F. Cauwet ; D. Carole ; G. Ferro
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.121-124,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
7.

Conference Proceedings
Conference Proceedings
7. Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD
K. Alassaad ; V. Soulière ; F. Cauwet ; D. Carole ; B. Doisneau
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.209-212,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
8.

Conference Proceedings
Conference Proceedings
8. Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation
V. Soulière ; K. Alassaad ; F. Cauwet ; H. Peyre ; T. Kups
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.115-120,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
9.

Conference Proceedings
Conference Proceedings
9. Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition
T. Sledziewski ; S. Beljakowa ; K. Alassaad ; P. Kwasnicki ; R. Arvinte
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.261-264,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
10.

Conference Proceedings
Conference Proceedings
10. On the Formation of Graphene by Ge Intercalation of a 4H-SiC Surface
N. Chandran ; M. Sall ; J. Arvanitidis ; D. Christofilos ; K. Alassaad
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.961-964,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823