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Conference Proceedings

1. Photoexcited and Metastable States of DX Centers in Si Doped AlxGal-xAs

Jia,Y.B. ; Grimmeiss,H.G. ; Calleja,E.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1025-1030, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

2. Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices

Han,Z.Y. ; Jia,Y.B. ; Grimmeiss,H.G.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1031-1034, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

3. Properties of ultrathin gate oxides grown in N20-based oxidation ambients by rapid thermal processing

Jia,Y.B. ; Pan,O.G. ; Wang,L.C. ; Lo,P. ; Lee,S.K. ; Choi,J.Y. ; Shih,J.

Pub. info.:	In-Line Methods and Monitors for Process and Yield Improvement. pp.112-115, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3884