1.

Conference Proceedings
Conference Proceedings
1. Color Chart for Thin SiC Films Grown on Si Substrates
L. Wang ; S. Dimitrijev ; G. Walker ; J.S. Han ; A. Iacopi
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.279-282,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes
J.S. Han ; P. Tanner ; S. Dimitrijev ; Q. Shuang ; Y. Shen
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.1111-1114,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. Dipole Type Behavior of NO Grown Oxides on 4H-SiC
D. Haasmann ; H. Amini Moghadam ; J.S. Han ; A. Aminbeidokhti ; A. Iacopi
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.453-456,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate
J.S. Han ; S. Dimitrjiev ; L. Wang ; A. Iacopi ; S. Qu
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.801-803,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
5.

Conference Proceedings
Conference Proceedings
5. The Microalloying Effects in Cu-Based Bulk Metallic Glasses
L.J. Yue ; J.S. Han ; K. Xie
Pub. info.: Nano-scale and amourphous materials : selected, peer reviewed papers from the IUMRS-ICA 2010, 11th IUMRS International Conference in Asia, September 25-28, 2010, Qingdao, China.  pp.407-412,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 688
6.

Conference Proceedings
Conference Proceedings
6. Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors
H. Amini Moghadam ; S. Dimitrijev ; J.S. Han ; A. Aminbeidokhti ; D. Haasmann
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.603-606,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
7.

Conference Proceedings
Conference Proceedings
7. A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method
J.M. Byun ; J.S. Han ; J.H. Park ; S.E. Lee ; H.C. Lee
Pub. info.: Optoelectronic materials : Selected, peer reviewed papers from the 2010 International Conference on Optical, Electronic and Electrical Materials, August 1-4, Kunming, China, OEEM 2010.  pp.650-653,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 663-665
8.

Conference Proceedings
Conference Proceedings
8. Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes
H. Amini Moghadam ; S. Dimitrijev ; J.S. Han
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.710-713,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
9.

Conference Proceedings
Conference Proceedings
9. Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures
D. Haasmann ; S. Dimitrijev ; J.S. Han ; A. Iacopi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.627-630,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
10.

Conference Proceedings
Conference Proceedings
10. Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs
P. Tanner ; S. Dimitrijev ; H. Amini Moghadam ; A. Aminbeidokhti ; J.S. Han
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.997-1000,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780