1.

Conference Proceedings
Conference Proceedings
1. A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs
S.H. Ryu ; S. Krishnaswami ; B.A. Hull ; B. Heath ; F. Husna ; J. Richmond ; A. Agarwal ; J. Palmour ; J. Scofield
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.775-778,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
B.A. Hull ; J.J. Sumakeris ; M.J. O'Loughlin ; Q.J. Zhang ; J. Richmond
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.931-934,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. SiC MOSFET Reliability Update
M.K. Das ; S.K. Haney ; J. Richmond ; A. Olmedo ; Q.J. Zhang
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1073-1076,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications
B.A. Hull ; J.J. Sumakeris ; M. Das ; J. Richmond ; J. Palmour
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.895-900,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
5.

Conference Proceedings
Conference Proceedings
5. Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules
J.D. Scofield ; J.N. Merrett ; J. Richmond ; A.K. Agarwal ; S. Leslie
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1119-1122,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
6.

Conference Proceedings
Conference Proceedings
6. A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed
Q.C.J. Zhang ; J. Richmond ; C. Capell ; A.K. Agarwal ; J.W. Palmour
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1045-1048,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
7.

Conference Proceedings
Conference Proceedings
7. 27 kV, 20 A 4H-SiC n-IGBTs
E. van Brunt ; L. Cheng ; M.J. O'Loughlin ; J. Richmond ; V. Pala
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.847-850,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
8.

Conference Proceedings
Conference Proceedings
8. Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
S.H. Ryu ; D.J. Lichtenwalner ; E. van Brunt ; C. Capell ; M.J. O'Loughlin ; C. Jonas ; Y. Lemma ; J. Zhang ; J. Richmond ; A.A. Burk ; B. Hull ; H. O'Brien ; A. Ogunniyi ; A.J. Lelis ; J. Casady ; D. Grider ; S. Allen ; J.W. Palmour
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.587-590,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
9.

Conference Proceedings
Conference Proceedings
9. Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
Q.J. Zhang ; G. Wang ; C. Jonas ; C. Capell ; S. Pickle ; P. Butler ; D.J. Lichtenwalner ; E. van Brunt ; S.H. Ryu ; J. Richmond ; B. Hull ; J. Casady ; S. Allen ; J.W. Palmour ; J.Q. Zhang
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.521-524,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897