1.

Conference Proceedings
Conference Proceedings
1. On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates
G. Ferro ; O. Kim-Hak ; J. Lorenzzi ; N. Jegenyes ; M. Marinova
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.71-74,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
2.

Conference Proceedings
Conference Proceedings
2. Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy
G. Zoulis ; J. Sun ; R. Vasiliauskas ; J. Lorenzzi ; H. Peyre
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.149-153,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
3.

Conference Proceedings
Conference Proceedings
3. Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas
J. Lorenzzi ; N. Jegenyes ; M. Lazar ; D. Tournier ; F. Cauwet
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.111-114,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD
N. Jegenyes ; G. Manolis ; J. Lorenzzi ; V. Soulière ; D. Dompoint
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.153-156,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
5.

Conference Proceedings
Conference Proceedings
5. Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
M. Marinova ; A. Mantzari ; J.W. Sun ; J. Lorenzzi ; A. Andreadou
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.165-168,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
6.

Conference Proceedings
Conference Proceedings
6. Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiC Substrate
J. Lorenzzi ; R. Esteve ; M. Lazar ; D. Tournier ; D. Carole
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.165-168,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
M. Marinova ; A. Andreadou ; J.W. Sun ; J. Lorenzzi ; A. Mantzari
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.241-244,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
8.

Conference Proceedings
Conference Proceedings
8. Electrical Activity of Structural Defects in 3C-SiC
J. Eriksson ; F. Roccaforte ; M.H. Weng ; F. Giannazzo ; J. Lorenzzi
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.273-276,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
9.

Conference Proceedings
Conference Proceedings
9. 3C-SiC MOS Based Devices: From Material Growth to Device Characterization
J. Lorenzzi ; R. Esteve ; N. Jegenyes ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.433-436,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
10.

Conference Proceedings
Conference Proceedings
10. Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
J. Lorenzzi ; G. Zoulis ; O. Kim-Hak ; N. Jegenyes ; D. Carole
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.171-174,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648