1.

Conference Proceedings
Conference Proceedings
1. Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual Substrates
B.G. Malm ; J. Hallstedt ; P. Hellström ; M. Ostling
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.529-537,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
2.

Conference Proceedings
Conference Proceedings
2. Selective Epitaxial Growth with Full Control of Pattern Dependency Behavior for pMOSFET Structures
M. Kolahdouz ; J. Hallstedt ; M. Ostling ; R. Wise ; H.H. Radamson
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.153-158,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)