1.

Conference Proceedings
Conference Proceedings
1. Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices
L.B. Rowland ; G.T. Dunne ; J. Fronheiser ; S. Soloviev
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.141-144,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters
J.J. McMahon ; L.C. Yu ; J. Fronheiser ; J.T. Elson ; R. Kovalec
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.797-800,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs
L.C. Yu ; J. Fronheiser ; V. Tilak ; K.P. Cheung
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.793-796,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720