1.

Conference Proceedings
Conference Proceedings
1. High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers
Singh, R. ; Irvine, K.G. ; Richmond, J.T. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1265-1268,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Mechanisms of Stacking Fault Growth in SiC PiN Diodes
Stahlbush, R.E. ; Twigg, M.E. ; Sumakeris, J.J. ; Irvine, K.G. ; Losee, P.A.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.103-114,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
3.

Conference Proceedings
Conference Proceedings
3. Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
Stahlbush, R.E. ; Twigg, M.E. ; Irvine, K.G. ; Sumakeris, J.J. ; Chow, T.P. ; Losee, P.A. ; Zhu, L. ; Tang, Y. ; Wang, W.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.533-536,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers
Singh, R. ; Irvine, K.G. ; Richmond, J.T. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1265-1268,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393