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18 results

Conference Proceedings

1. CHARACTERIZATION OF GaSb-BASED ALLOY SEMICONDUCTORS

Uekita, H. ; Kitamura, N. ; Ichimura, M. ; Usami, A. ; Wada, T.

Pub. info.:	Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.169-174, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	216

Conference Proceedings

2. Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition

Kato, M. ; Tanaka, S. ; Ichimura, M. ; Arai, E. ; Nakamura, S. ; Kimoto, T.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.381-384, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

3. Conductivity of LixMgyAlz(SO4)3 as a New Lithium Ionic Conductor for a Solid- State Cell

Shodai, T. ; Ohtsuka、H. ; Ichimura, M. ; Yamaki, J-i.

Pub. info.:	Proceedings of the Symposium on Lithium Batteries. pp.94-104, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-4

Conference Proceedings

4. Characterization Of Deep Levels In 3C-SiC By Optical Capacitance-Transient Spectroscopy

Nakakura, Y. ; Kato, M. ; Ichimura, M. ; Arai, E. ; Tokuda, Y.

Pub. info.:	Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.. pp.167-172, 2002. Warrendale, Pa. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	719

Conference Proceedings

5. Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation

Kato, M. ; Ichimura, M. ; Arai, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.933-936, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. CONTACTLESS MEASUREMENTS OF SLIP LINES INTENTIONALLY INTRODUCED IN Si WAFERS DURING RAPID THERMAL PROCESSING

Usami, A. ; Shiraki, H. ; Fujiwara, H. ; Abe, R. ; Osamura, N. ; Ichimura, M. ; Wada, T.

Pub. info.:	Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.. pp.215-222, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	224

Conference Proceedings

7. Inverse TMR effect in Co0.9Fe0.1/SrTiO3/ La0.7Sr0.3MnO3 Tunnel Junctions

Sugiyama, M. ; Asano, H. ; Matsui, M. ; Hayakawa, J. ; Kokado, S. ; Itou, K. ; Sakuma, A. ; Ichimura, M.

Pub. info.:	Spintronics : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A.. pp.29-34, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	690

Conference Proceedings

8. Novel "Photochemical Deposition" and Conventional "Electrochemical Deposition" of CdS and HgxCd1-xTe Thin Films and Their Characterization for Solar Cell Device Applications

Kumaresan, R. ; Ichimura, M. ; Babu, S. Moorthy ; Ramasamy, P.

Pub. info.:	II-VI compound semiconductor photovoltaic materials : symposium held April 16-20, 2001, San Francisco, California, U.S.A.. 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	668

Conference Proceedings

9. Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation

Kato, M. ; Ichimura, M. ; Arai, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.933-936, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution

Kato, M. ; Ichimura, M. ; Arai, E. ; Sumie, S. ; Hashizume, H.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.505-508, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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Author: Ichimura, M.