1.

Conference Proceedings
Conference Proceedings
1. Adsorbate Effects of the Surface Structure of 6H-SiC(0001) √3x√3-R30°
Aoyama, T. ; Hisada, Y. ; Mukainakano, S. ; Ichimiya, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.705-708,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Reflection High-Energy Positron Diffraction: Solved and Unsolved Problems
Kawasuso, A. ; Kojima, K. ; Yoshikawa, M. ; Itoh, H. ; Okada, S. ; Ichimiya, A.
Pub. info.: Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany.  pp.445-447,  2001.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 363-365
3.

Conference Proceedings
Conference Proceedings
3. Initial Oxidation of 6H-SiC (0001) (?3 x ?3)-R30° and 3 x 3 Surfaces Studied by AES and RHEED
Aoyama, T. ; Voegeli, W. ; Ichimiya, A. ; Hisada, Y. ; Mukainakano, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1313-1316,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. Investigation of SiO2/SiC Interface using Positron Annihilation Technique
Maekawa, M. ; Kawasuso, A. ; Yoshikawa, M. ; Ichimiya, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1301-1304,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam
Maekawa, M. ; Kawasuso, A. ; Yoshikawa, M. ; Ichimiya, A.
Pub. info.: Positron annihilation ICPA-13 : proceedings of the 13th International Conference on Positron Annihilation, Kyoto, Japan, September 2003.  pp.144-146,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 445-446
6.

Conference Proceedings
Conference Proceedings
6. Observation of Fast Positron Diffraction from a Si(111)7x7 Surface
Kawasuso, A. ; Fukaya, Y. ; Hayashi, K. ; Maekawa, M. ; Ishimoto, T. ; Okada, S. ; Ichimiya, A.
Pub. info.: Positron annihilation ICPA-13 : proceedings of the 13th International Conference on Positron Annihilation, Kyoto, Japan, September 2003.  pp.385-389,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 445-446
7.

Conference Proceedings
Conference Proceedings
7. Adsorbate Effects of the Surface Structure of 6H-SiC(0001) √3x√3-R30°
Aoyama, T. ; Hisada, Y. ; Mukainakano, S. ; Ichimiya, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.705-708,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393