1.

Conference Proceedings
Conference Proceedings
1. Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics
W. Bahng ; H.J. Cheong ; I.H. Kang ; S.J. Kim ; S.C. Kim ; S.J. Joo ; N.K. Kim
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.595-598,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode
H.J. Jung ; S.B. Yun ; I.H. Kang ; J.H. Moon ; W.J. Kim
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.563-566,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures
K.H. Kim ; Y.H. Kang ; J.H. Lee ; E.S. Jung ; I.H. Kang
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.733-736,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process
I.H. Kang ; J.Y. Song ; S.J. Joo ; W. Bahng ; S.C. Kim
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.959-962,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
I.H. Kang ; W. Bahng ; S.J. Joo ; S.C. Kim ; N.K. Kim
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.663-666,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
6.

Conference Proceedings
Conference Proceedings
6. FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD
S.J. Kim ; S. Kim ; S.C. Kim ; I.H. Kang ; K.H. Lee ; T. Matsuoka
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.869-872,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
7.

Conference Proceedings
Conference Proceedings
7. Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations
I.H. Kang ; W. Bahng ; S.C. Kim ; S.J. Joo ; N.K. Kim
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.823-826,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
8.

Conference Proceedings
Conference Proceedings
8. Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
I.H. Kang ; S.J. Joo ; W. Bahng ; S.C. Kim ; N.K. Kim
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1151-1154,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648