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27 results

Conference Proceedings

1. INTRODUCTORY REMARKS - ITRS UPDATE AND GLOBAL CONSORTIA

Huff, H.R. ; Fabry, L. ; Kishino, S.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.3-4, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

2. APPENDIX 1 - AN ELECTRONICS DIVISON RETROSPECTIVE-- AND FUTURE OPPORTUNITIES IN THE TWENTY-FIRST CENTURY

Huff, H.R.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.1005-1058, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

3. STUDY OF DIFFUSIVITY AND ELECTRICAL PROPERTIES OF Zr AND Hf IN SILICON

Vyvenko, O.F. ; Sachdeva, R. ; Istratov, A.A. ; Armitage, R. ; Weber, E.R. ; Deenapanray, P.N.K. ; Jagadish, C. ; Gao, Y. ; Huff, H.R.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.440-454, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

4. The Gate Stack/Shallow Junction Challenge for Sub-100 nm Technology Generations *

Huff, H.R. ; Brown, G.A. ; Larson, L.A.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.223-249, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-2

Conference Proceedings

5. John Bardeen and transistor physics

Huff, H.R.

Pub. info.:	ULSI process integration : proceedings of the first international symposium. pp.19-58, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-18

Conference Proceedings

6. Gate Dielectrics Formed by Remote Plasma Nitridaion of Ultrathin In-Situ Steam Generated (ISSG) Oxides

Watt, V.H.C. ; Torres, K. ; Jackson, M.D. ; Huff, H.R. ; Abmed, K. ; Jallepally, R. ; Noble, D. ; Toni, N. ; Miner, G.

Pub. info.:	Rapid thermal and other short-time processing technologies : proceedings of the international symposium. pp.231-238, 2000. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-9

Conference Proceedings

7. Silicon Materials for the Mega-IC Era

Huff, H.R.

Pub. info.:	Proceedings of the fourth International Symposium on Ultra Large Scale Integration Science and Technology : ULSI science and technology/1993. pp.103-132, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-13

Conference Proceedings

8. CHARACTERIZATION OF 300 mm SILICON POLISHED WAFERS

Au, C. ; Messina, T. ; Goodall, R.K. ; Huff, H.R.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.641-659, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(1)

Conference Proceedings

9. APPENDIX 1 - AN ELECTRONICS DIVISON RETROSPECTIVE-- AND FUTURE OPPORTUNITIES IN THE TWENTY-FIRST CENTURY

Huff, H.R.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.1005-1058, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

10.

Conference Proceedings

10. Oxygen Precipitation Behaviour in 300 mm Polished Czochralski Silicon Wafers

Ono, T. ; Rozgonyi, G.A. ; Au, C. ; Messina, T. ; Goodall, R.K. ; Huff, H.R.

Pub. info.:	Proceedings of the Fifth International Symposium on High Purity Silicon V. pp.125-134, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-13

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