1.

Conference Proceedings
Conference Proceedings
1. ELECTRICAL ACTIVATION BEHAIOR OF ION IMPLANTED SILICON IN GALLIUM ARSENIDE DURING RAPID THERMAL ANNEALING
Fathimulla, A. ; Loughran, T. ; Hovel, H. J.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.495-500,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
2.

Conference Proceedings
Conference Proceedings
2. SIMOX MATERIAL DEVELOPMENT FOR SUB-0.25ｦﾌm CMOS TECHNOLOGY
Sadana, D. K. ; Hovel, H. J. ; Freeouf, J. L. ; Chu, S. F.
Pub. info.: Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.699-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 316
3.

Conference Proceedings
Conference Proceedings
3. (8.6) 5:55 - 6:15 PM Strained-Silcon / Silicbn- Germanium-on-Insulator for High Peformance CMOS - A Manufacturable Process for 300 MM Substrates
Reznicek, A. ; Bedell, S. W. ; Hovel, H. J. ; Fogel, K. E. ; Ott, J. A. ; Mitchell, R. M. ; Sadana, D. K. (IBM)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.607-618,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07