1.

Conference Proceedings
Conference Proceedings
1. Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures
Monemar,B. ; Bergman,J.P. ; Pozina,G. ; Dalfors,J. ; Sernelius,B.E. ; Holtz,P.O. ; Amano,H. ; Akasaki,I.
Pub. info.: Ultrafast phenomena in semiconductors III : 27-29 January, 1999, San Jose, California.  pp.168-178,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3624
2.

Conference Proceedings
Conference Proceedings
2. Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells
Harris,C.I. ; Monemar,B. ; Holtz,P.O. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C.
Pub. info.: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.285-290,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 117-118
3.

Conference Proceedings
Conference Proceedings
3. Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
Monemar,B. ; Holtz,P.O. ; Harris,C.I. ; Bergman,J.P. ; Kalt,H. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C. ; Kohler,K. ; Schweizer,T.
Pub. info.: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.29-36,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 117-118
4.

Conference Proceedings
Conference Proceedings
4. Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
Holtz,P.O. ; Zhao,Q.X. ; Monemar,B. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.657-662,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
5.

Conference Proceedings
Conference Proceedings
5. Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells
Bergman,J.P. ; Holtz,P.O. ; Monemar,B. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.629-634,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
6.

Conference Proceedings
Conference Proceedings
6. Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells
Bergman,J.P. ; Holtz,P.O. ; Monemar,B. ; Lindstrom,L. ; Sundaram,M. ; Gossard,A.C. ; Merz,J.L.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.449-454,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201