1.

Conference Proceedings
Conference Proceedings
1. CLEANING PROCEDURES FOR UHV CLUSTER-TOOL MOS FABRICATION
Sofield, C.J. ; Murrell, M.P. ; Sugden, S. ; Heyns, M. ; Verhaverbecke, S. ; Welland, M.E. ; Golan, B. ; Barnes, J.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.105-112,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
2.

Conference Proceedings
Conference Proceedings
2. SURFACE CHARACTERISATION OF Si AFTER HF TREATMENTS AND ITS INFLUENCE ON THE DIELECTRIC BREAKDOWN OF THERMAL OXIDES
Verhaverbeke, S. ; Alay, J. ; Mertens, P. ; Meuris, M. ; Heyns, M. ; Vandervorst, W. ; Murrell, M. ; Sofield, C.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.391-398,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
3.

Conference Proceedings
Conference Proceedings
3. Impact of High-k Properties on MOSFET Electrical Characteristics
Pantisano, Ll. ; Ragnarsson, L. -A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; Degendt, S. ; Heyns, M. ; Afanas'ev, V.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.97-109,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
4.

Conference Proceedings
Conference Proceedings
4. Influence of the Height Difference between the First and Second Nitride Layer on Erosion and Dishing in the Dual Nitride Approach for Shallow Trench Isolation
Heylen, N. ; Grillaert, J. ; Vrancken, E ; Badenes, G. ; Rooyackers, R. ; Meuris, M. ; Heyns, M.
Pub. info.: Proceedings of the Second International Symposium on Chemical Mechanical Planariarization [sic] in Integrated Circuit Device Manufacturing.  pp.26-36,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-7
5.

Conference Proceedings
Conference Proceedings
5. MODELLING OF CRYSTAL ORIGINATED PARTICLES AND THEIR IMPACT ON GATE OXIDE INTEGRITY
Bearda, T. ; Mertens, P.W. ; Woerlee, P.H. ; Wallinga, H. ; Sebmolke, R. ; Heyns, M.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.528-539,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
6.

Conference Proceedings
Conference Proceedings
6. EVALUATION OF MEGASONIC CLEANING SYSTEMS FOR PARTICLE REMOVAL EFFICIENCY AND DAMAGING
Vereecke, G. ; Holsteyns, F. ; Veltens, J. ; Lux, M. ; Amauts, S. ; Kenis, K. ; Vos, R. ; Mertens, P. ; Heyns, M.
Pub. info.: Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium.  pp.145-152,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-26
7.

Conference Proceedings
Conference Proceedings
7. MECHANISMS OF PARTICLE REMOVAL DURING BRUSH SCRUBBER CLEANING
Xu, K. ; Vos, R. ; Vereecke, G. ; Mertens, P. ; Heyns, M. ; Vinckier, C. ; Fransaer, J.
Pub. info.: Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium.  pp.137-144,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-26
8.

Conference Proceedings
Conference Proceedings
8. CORROSION OF ALUMINUM ALLOYS DURING DRYING OF METALLIZED WAFERS
Vos, R. ; Meuris, M. ; Mertens, P. ; Heyns, M. ; Hatcher, Z.
Pub. info.: Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.569-578,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-35
9.

Conference Proceedings
Conference Proceedings
9. 45. TaN metal gate MOSFETs with aggressively scaled HfO2 dielectrics
Lander, R. ; Schram, T. ; Lulan, G.S. ; hooker, J. ; Vertommen, J. ; Lee, S. ; de Weerd, W. ; Boullart, W. ; van Elshocht, S ; Carter, R. ; Kubicek, S. ; Demeyer, K. ; De Gendt, S. ; Heyns, M.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.367-374,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
10.

Conference Proceedings
Conference Proceedings
10. Effect of Substrate Defects on GOI of Ultra-Thin Gate Oxides
Bearda, T.R. ; Vanhellemont, J. ; Mertens, P.W. ; Heyns, M.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.258-263,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13