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20 results

Conference Proceedings

1. LOW PRESSURE GROWTH OF GaAs/A1GaAs LAYERS ON 2" AND 3" SUBSTRATES IN A MULTIWAFER REACTOR

Heyen, M. ; Heuken, M. ; Strauch, G. ; Schmitz, D. ; J-rgensen, H. ; Heime, K.

Pub. info.:	III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.. pp.245-252, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	145

Conference Proceedings

2. Mass Production of GaAs Based Optoelectronic Device in an AIX 2600G3 Reactor in the 42x2 Inch Configuration

Schineller, B. ; Schmitt, T. ; Christiansen, K. ; Chiu, C-S. ; Dauelsberg, M. ; Heuken, M.

Pub. info.:	Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology. pp.87-94, 2004. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-02

Conference Proceedings

3. Multiwafer MOVPE of III-Nitride Films for LED and Laser Applications

Beccard, R. ; Schoen, O. ; Schineller, B. ; Schmitz, D. ; Heuken, M. ; Jurgensen, H.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.155-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

4. Ternary Group-III Nitrides Grown in MOVPE Production Reactors

Schoen, O. ; Protzmann, H. ; Schwambera, M. ; Schineller, B. ; Heuken, M. ; Schmitz, D. ; Strauch, G. ; Juergensen, H.

Pub. info.:	Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.125-, 1998. Warrendale, Pa. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	510

Conference Proceedings

5. Hydride vapour phase homoepitaxial growth of GaN on MOCVD-Grown 'Templates'

Paskova, T. ; Tungasmita, S. ; Valcheva, E. ; Svedberg, E. B. ; Arnaudov, B. ; Evtimova, S. ; Persson, P. A. ; Henry, A. ; Beccard, R. ; Heuken, M. ; Monemar, B.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W3.14.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

6. Reliable, Reproducible, and Efficient MOCVD of III-Nitrides in Production Scale Reactors

Wachtendorf, B. ; Beccard, R. ; Schmitz, D. ; Jurgensen, H. ; Schon, O. ; Heuken, M. ; Woelk, E.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.7-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

7. UV-Blue lasers based on InGaN/GaN/Al2O3 and on InGaN/GaN/Si heterostrutures

Yablonkii, G. P. ; Heuken, M.

Pub. info.:	Towards the first silicon laser. pp.455-464, 2003. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	93

Conference Proceedings

8. MOCVD Materials for Electronic and Optoelectronic Applications

Christiansen, K. ; Luenenbuerger, M. ; Dikme, Y. ; Schineller, B. ; Heuken, M. ; Juergensen, H.

Pub. info.:	Chemical vapor deposition XVI and EUROCVD 14 : proceedings of the international symposium. pp.455-462, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-8

Conference Proceedings

9. Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates

Javorka, P. ; Alam, A. ; Marso, M. ; Wolter, M. ; Fox, A. ; Heuken, M. ; Kordos, P.

Pub. info.:	GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.. pp.527-536, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	743

10.

Conference Proceedings

10. Reproducibility and uniformity of MOVPE planetary reactors(R) for the growth of GaN based materials

Heuken, M. ; Protzmann, H. ; Schoen, O. ; Luenenbuerger, M. ; Juergensen, H. ; Bremser, M. ; Woelk, E.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.321-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

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