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21 results

Conference Proceedings

1. High Purity SiC EpitaxiaI Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources

Hatayama, T. ; Yano, H. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.203-206, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. 3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method

Yanagisawa, Y. ; Hatayama, T. ; Yano, H. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.423-426, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Reduction of Fluoride Species and Surface Roughness by H2 Gas Addition in SiC Dry Etching

Mikami, H. ; Horie, Y. ; Hatayama, T. ; Yano, H. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.757-760, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

4. Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

Yano, H. ; Hatayama, T. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.971-974, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

Nakao, H. ; Mikami, H. ; Yano, H. ; Hatayama, T. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1293-1296, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition

Hino, S. ; Hatayama, T. ; Miura, N. ; Ozeki, T. ; Tokumitsu, E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1079-1082, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment

Maeyama, Y. ; Yano, H. ; Hatayama, T. ; Uraoka, Y. ; Fuyuki, T. ; Shirafuji, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.997-1000, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers

Hatayama, T. ; Kawahito, K. ; Kijima, H. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.925-928, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC

Yano, H. ; Hatayama, T. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.685-688, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

10.

Conference Proceedings

10. Growth of SiC on 6H-SiC {0114} Substrates by Gas Source Molecular Beam Epitaxy

Nakamura, S. ; Hatayama, T. ; Kimoto, T. ; Fuyuki, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.201-204, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

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Author: Hatayama, T.