1.

Conference Proceedings
Conference Proceedings
1. AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss Switching Device
Yoshida, Seikoh ; Ikeda, Nariaki ; Li, Jiang ; Hataya, Kohji ; Wada, Takahiro ; Takehara, Hironari
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.343-348,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
2.

Conference Proceedings
Conference Proceedings
2. Normally-off operation GaN HFET using a thin AlGaN layer for low loss switching devices
Ikeda, Nariaki ; Kato, Kazuo ; Li, Jiang ; Hataya, Kohji ; Yoshida, Seikoh
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.355-360,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831