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Conference Proceedings

1. 6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

Paskova,T. ; Valcheva,E. ; Ivanov,I.G. ; Yakimova,R. ; Savage,S. ; Nordell,N. ; Harris,C.I.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.741-744, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

2. SiC Surface Engineering for High Voltage JFET Applications

Ivanov,P.A. ; Kon'kov,0.I. ; Konstantinov,A.O. ; Panteleev,V.N. ; Samsonova,T.P. ; Nordell,N. ; Karlsson,S. ; Harris,C.I.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1081-1084, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

3. Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells

Harris,C.I. ; Stutzmann,M. ; Kohler,K.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.339-344, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

4. Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices

Konstantinov,A.O. ; Wahab,Q. ; Hallin,C. ; Harris,C.I. ; Pecz,B.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1025-1028, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

5. Near Band-Gap Emission in V-Inrplanted and Annealed 4H-SiC

Henry,A. ; Egilsson,T. ; Ivanov,I.G. ; Harris,C.I. ; Savage,S. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.497-500, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

6. Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells

Harris,C.I. ; Monemar,B. ; Holtz,P.O. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.285-290, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

7. Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells

Monemar,B. ; Holtz,P.O. ; Harris,C.I. ; Bergman,J.P. ; Kalt,H. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C. ; Kohler,K. ; Schweizer,T.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.29-36, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

8. Thermal Stability of Sputtered TiN as Metal Gate on 4H-SiC

Danielsson,L. ; Harris,C.I. ; Zetteriing,C.-M. ; Osthng,M.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.805-808, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

9. Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface

Afanas'ev,V.V. ; Stesmans,A. ; Harris,C.I.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.857-860, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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Conference Proceedings

10. Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures

Zetterling,C.-M. ; Ostling,M. ; Harris,C.I. ; Nordell,N. ; Wongchotigul,K. ; Spencer,M.G.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.877-880, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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