1.

Conference Proceedings
Conference Proceedings
1. Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaN
Harima,H. ; Sakashita,H. ; Nakashima,S.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1363-1366,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Defeet Formation Mechanism of Bulk SiC
Sasaki,M. ; Nishio,Y. ; Nishino,S. ; Nakashima,S. ; Harima,H.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.41-44,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon
Mizoguchi,K. ; Nakashima,S. ; Harima,H. ; Hara,T.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1547-1552,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
4.

Conference Proceedings
Conference Proceedings
4. Positron Annihilation Study of the Electronic Structure of CeCu6 and LaCu6
Biasini,M. ; Harima,H. ; Onuki,Y. ; Fretwell,H.M. ; Dugdale,S.B. ; Alam,M.A. ; West,R.N.
Pub. info.: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part2  pp.887-890,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 175-178
5.

Conference Proceedings
Conference Proceedings
5. A Positron Annihilation Study of the Electronic Structure of CeB6
Biasini,M. ; Alam,M.A. ; Harima,H. ; Onuki,Y. ; Fretwell,H.M. ; West,R.N.
Pub. info.: Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China.  Part2  pp.883-886,  1995.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 175-178
6.

Conference Proceedings
Conference Proceedings
6. Electronic Properties of Doped SiC at Elevated Temperatures Studied by Rauran Scattering
Harima,H. ; Hosoda,T. ; Nakashima,S.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.449-454,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268