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17 results

Conference Proceedings

1. Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC

Nakashima, S. ; Nakatake, Y. ; Yano, Y. ; Harima, H. ; Ohtani, N. ; Katsuno, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.633-636, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. A Raman Study of Metal-SiC Interface Reactions

Kurimoto, E. ; Harima, H. ; Toda, T. ; Sawada, M. ; Nakashima, S. ; Iwami, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.637-640, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Ultrafast Electron Relaxation Processes in SiC

Tomita, T. ; Saito, S. ; Suemoto, T. ; Harima, H. ; Nakashima, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.641-646, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. 6 Ultraviolet Raman Spectroscopic Study on Flash-Anneal Recrystallization of Ultra-Shallow Boron-Implanted Layer on Silicon

Yoshimoto, M. ; Nishigaki, H. ; Harima, H. ; Kang, K. ; Yoo, W. S.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.50-57, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

Conference Proceedings

5. Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6

Masuda, Y. ; Chen, Y. ; Matsuura, H. ; Harima, H. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.711-714, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

6. Crystal Growth of 15R-SiC Boules by Sublimation Method

Nishiguchi, T. ; Okada, S. ; Sasaki, M. ; Harima, H. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.115-118, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

7. Raman Spectral Profiles of Folded Longitudinal Modes in SiC under Off-Resonant Condition

Nakashima, S. ; Harima, H. ; Tomita, T. ; Suemoto, T.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.591-594, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

8. Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy

Furusho, T. ; Matsumoto, K. ; Harima, H. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.217-220, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

9. Carrier Density Evaluation in P-Type SiC by Raman Scattering

Harima, H. ; Hosoda, T. ; Nakashima, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.607-610, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

10.

Conference Proceedings

10. Raman Imaging Characterization of Electric Properties of SiC Near a Micropipe

Harima, H. ; Hosoda, T. ; Nakashima, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.603-606, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

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Author: Harima, H.