1.

Conference Proceedings
Conference Proceedings
1. NEW GROUP III PRECURSORS FOR THE MOVPE OF GaAs AND InP BASED MATERIAL
Hostalek, M. ; Pohl, L. ; Brauers, A. ; Balk, P. ; Frese, V. ; Hardtdegen, H. ; Hovel, R. ; Regel, G. K. ; Molassioti, A. ; Moser, M. ; Scholz, F. ; Schumann, H. ; Hartmann, K. U,. ; Wassermann, W.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.205-210,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
2.

Conference Proceedings
Conference Proceedings
2. Microphotoluminescence Studies on Single GaN Nanocolumns
Sebald, K. ; Gutowski, J. ; Thillosen, N. ; Montanari, S. ; Meijers, R. ; Calarco, R. ; Kaluza, N. ; Hardtdegen, H. ; Luth, H.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.805-812,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
3.

Conference Proceedings
Conference Proceedings
3. Interactions at Metal/InP Interfaces Formed at 300K and 77K
Palmer, J. W. ; Anderson, W. A. ; Hoelzer, D. T. ; Hardtdegen, H.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.257-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
4.

Conference Proceedings
Conference Proceedings
4. Residual Impurities and Transport Properties of High Purity MOVPE GaAs
Steude, G. ; Hofmann, D. M. ; Drechsler, M. ; Meyer, B. K. ; Hardtdegen, H. ; Hollfelder, M.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.399-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442
5.

Conference Proceedings
Conference Proceedings
5. Use of Nitrogen As The Ambient in The L.P.-MOVPE of III/V's
Hardtdegen, H.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.49-59,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2