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Conference Proceedings

1. Many-electron effects in the negative silicon vacancy

Anderson,F.G. ; Ham,F.S. ; Grossman,G.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.475-480, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

2. Zeeman Spectroscopy and Crystal-Field Model of Neutral Vanadium in 6H-Silicon Carbide

Kaufmann,B. ; Dornen,A. ; Ham,F.S.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.707-712, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

3. Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V3+ Defect in GaAs

Anderson,F.G. ; Ham,F.S.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part1 pp.305-310, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

4. Uniaxial stress alignment of Pd- and Ni- in silicon

Williams,P.M. ; Ham,F.S. ; Anderson,F.G. ; Watkins,G.D.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.233-238, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87