1.

Conference Proceedings
Conference Proceedings
1. Plasma-Assisted MBE Growth of GaN on GaN/Sapphire Templates Grown In Situ by Ammonia- MBE
Tang, H. ; Rolfe, S. ; Beaulieu, M. ; Sproule, I. ; Haffouz, S. ; Web, J.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.215-224,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
2.

Conference Proceedings
Conference Proceedings
2. Comparative Study of GaN MOVPE Growth Processes Using Two Different "Surface Preparation-Carrier Gas" Combinations
Vennegues, P. ; Haffouz, S. ; Bouille, A. ; Leroux, M. ; Beaumont, B.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.273-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
3.

Conference Proceedings
Conference Proceedings
3. Growth of GaN Epilayers on Si(111) Substrates Using Multiple Buffer Layers
Hageman, P.R. ; Haffouz, S. ; Grzegorczk, A. ; Kirilyuk, V. ; Larsen, P.K.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.105-110,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693