1.

Conference Proceedings
Conference Proceedings
1. Noise in Si/SiGe and Ge/SiGe MODFET (Invited Paper)
Aniel, F. P. ; Enciso-Aguilar, M. ; Rodriguez, M. ; Zerounian, N. ; Crozat, P. ; Hackbarth, T. ; Herzog, J.-H.
Pub. info.: Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain.  pp.107-121,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5470
2.

Conference Proceedings
Conference Proceedings
2. (4.23) 8:31 - 8:34 PM - Anomalous Behaviour of Buried Strained-Si Channel Heterojunction FETs at Low Temperatures
Gaspari, V. ; Fobelets, K. ; Velazquez-Perez, J. E. ; Hackbarth, T. ; Konig, U. (Imperial College, London)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.313-318,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07
3.

Conference Proceedings
Conference Proceedings
3. Quantum Interference and Spin-Splitting Effects in Si1-xGex p-type Quantum Well
Andrievskii, V. V. ; Berkutov, I. B. ; Hackbarth, T. ; Komnik, Yu. F. ; Mironov, O. A. ; Myronov, M. ; Litvinov, V. I. ; Whall, T. E.
Pub. info.: Molecular nanowires and other quantum objects.  pp.319-328,  2004.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 148
4.

Conference Proceedings
Conference Proceedings
4. A posiible production technique for modulation doped SiGe heterostructures
Rosenblad, C. ; Kummer, M. ; Muller, E. ; Hackbarth, T. ; Kanel, H. von
Pub. info.: Fundamental mechanisms of low-energy-beam-modified surface growth and processing : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A..  pp.141-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 585