1.

Conference Proceedings
Conference Proceedings
1. Elfect of Deposition Sequence and Plasma Treatment on ALCVD HfO2 n-MOSFET Properties
C. Lim ; Y. Kim ; A. Hou ; J. Gutt ; S. Marcus ; C. Pomarede ; E. Shero ; H. de Waard ; C. Werkhoven ; L. Chen ; J. Tamim ; N. Chaudhary ; G. Bersuker ; J. Barnett ; C. Young ; P. Zeitzoff ; G. A. Brown ; M. Gardner ; R. W. Murto ; H. R. Huff
Pub. info.: Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues.  pp.83-92,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-28
2.

Conference Proceedings
Conference Proceedings
2. Improved Scalability of High-K Gate Dielectrics by using Hf-Aluminates
T. H. Hou ; J. Gutt ; C. Lim ; S. Marcus ; C. Pomarede ; E. Shera ; H. de Warrd ; C. Werkhoven ; M. Gardner ; R. W. Murto ; H. R. Huff
Pub. info.: Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues.  pp.141-148,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-28