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11 results

Conference Proceedings

1. Evaluation with Surface Analysis Equipment, of Casting Defects in Cast Iron Articles (review)

H. Kambayashi ; Y. Kurokawa ; H. Ota ; Y. Hoshiyama ; H. Miyake

Pub. info.:	THERMEC 2006 : supplement to THERMEC 2006, 5th International conference on processing and manufacturing of advanced materials, July 4-8, 2006, Vancouver, Canada. 539-543 pp.1110-1115, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	539-543(2)

Conference Proceedings

2. What is the Essence of VFB Shifts in High-κ Gate Stack?

T. Nabatame ; K. Iwamoto ; K. Akiyama ; Y. Nunoshige ; H. Ota

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.543-555, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

3. Application of Advanced Atomic Layer Deposition for Understanding and Control of VTH and EOT in Metal/High-κ Gate Stacks

A. Toriumi ; T. Nabatame ; H. Ota

Pub. info.:	Atomic layer deposition applications 4. pp.69-75, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(4)

Conference Proceedings

4. Inversion Layer Mobility in High-κ Dielectric MOSFETs - Intrinsic Mobility Degradation by Electric Dipoles at High-κ/SiO2 Interface

H. Ota ; A. Hirano ; Y. Watanabe ; N. Yashuda ; K. Iwamoto

Pub. info.:	Physics and technology of high-k gate dielectrics 6. pp.67-75, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(5)

Conference Proceedings

5. High Corrosion Resistance 21%Cr-0.4%Cu Ferritic Stainless Steel Contributing to Resource Conservation

H. Ota ; T. Ishii ; T. Samukawa ; T. Ujiro ; H. Yamashita

Pub. info.:	THERMEC 2009, 6th International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS, Berlin, Germany, August 25-29, 2009. pp.3435-3440, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	638-642

Conference Proceedings

6. Roles of Predominant and Subordinate Carriers in Breakdown Mechanism of High-k Gate Dielectrics Studied with HfAlOx/SiO₂ Stacks

K. Okada ; H. Ota ; A. Ogawa ; W. Mizubayashi ; T. Horikawa ; H. Satake ; T. Nabatame ; A. Toriumi

Pub. info.:	Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5. pp.179-190, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(1)

Conference Proceedings

7. Achievement of Higher-κ and High-Φ in Phase Controlled HfO2 Film Using Post Gate Electrode Deposition Annealing

Y. Watanabe ; H. Ota ; S. Migita ; Y. Kamimuta ; K. Iwamoto

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.35-45, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

8. Accurate TDDB Lifetime Prediction of High-k Stacked Gate Dielectrics with Regarding High Density Initial Traps

K. Okada ; H. Ota ; T. Nabatame ; A. Toriumi

Pub. info.:	Silicon nitride, silicon dioxide, and emerging dielectrics 9. pp.671-686, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	6(3)

Conference Proceedings

9. Significance of Nitrogen and Aluminum Depth Profile Control in HfAlON Gate Insulators

H. Ota ; A. Ogowa ; M. Kadoshima ; K. Iwamoto ; K. Okada ; H. Satake ; T. Nabatame ; A. Toriumi

Pub. info.:	Physics and technology of high-k gate dielectrics 4. pp.41-48, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(3)

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Conference Proceedings

10. Thermal Robustness of VFB and EOT in HfOx(N) p-MOS Devices with Partially Silicided Pt Gate Electrodes

M. Kadoshima ; T. Nabatame ; M. Takahashi ; A. Ogawa ; K. Iwamoto ; W. Mizubasyashi ; H. Ota ; H. Satake ; A. Toriumi

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.287-294, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

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Author: H. Ota