1.

Conference Proceedings
Conference Proceedings
1. Normally-Off 4H-SiC Vertical JFET with Large Current Density
H. Shimizu ; Y. Onose ; T. Someya ; H. Onose ; N. Yokoyama
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1059-1062,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
2.

Conference Proceedings
Conference Proceedings
2. Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices
K. Mochizuki ; H. Onose
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.607-610,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit
K. Ishikawa ; K. Ogawa ; N. Kameshiro ; H. Onose ; M. Nagasu
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1127-1130,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648