1.

Conference Proceedings
Conference Proceedings
1. Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation
S.I. Kuroki ; H. Nagatsuma ; M. de Silva ; S. Ishikawa ; T. Maeda
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.864-867,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts
H. Nagatsuma ; S.I. Kuroki ; M. de Silva ; S. Ishikawa ; T. Maeda
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.573-576,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics
S.I. Kuroki ; T. Kurose ; H. Nagatsuma ; S. Ishikawa ; T. Maeda ; H. Sezaki ; T. Kikkawa ; T. Makino ; T. Ohshima ; M. Östling ; C.M. Zetterling
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.669-672,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897