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12 results

Conference Proceedings

1. Selenium and Tellurium Double Donors in SiC

S.A. Reshanov ; H.B. Weber ; G. Pensl ; A. Schoener ; H. Nagasawa

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.607-610, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. High Quality 3C-SiC Substrate for MOSFET Fabrication

H. Nagasawa ; T. Kawahara ; K. Yagi ; N. Hatta ; H. Uchida

Pub. info.:	HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France. pp.91-98, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	711

Conference Proceedings

3. Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping

Y. Umeno ; K. Yagi ; H. Nagasawa

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.415-418, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

4. Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes

B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; H. Nagasawa

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.571-574, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

5. Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)

N. Hatta ; T. Kawahara ; K. Yagi ; H. Nagasawa ; S.A. Reshanov

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.173-176, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

6. High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility

H. Uchida ; A. Minami ; T. Sakata ; H. Nagasawa ; M. Kobayashi

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.1109-1112, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

7. Propagation of Stacking Faults in 3C-SiC

H. Nagasawa ; T. Kawahara ; K. Yagi ; N. Hatta

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.282-285, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

8. Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress

Y. Sun ; S. Izumi ; S. Sakai ; K. Yagi ; H. Nagasawa

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.501-504, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

9. High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure

S. Jiao ; Y. Murakami ; H. Nagasawa ; H. Fukidome ; I. Makabe

Pub. info.:	HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France. pp.89-94, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	806

10.

Conference Proceedings

10. Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance

H. Nagasawa ; K. Yagi ; T. Kawahara ; N. Hatta ; M. Abe

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.89-94, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

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Author: H. Nagasawa