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24 results

Conference Proceedings

1. Electronic Structure Analysis of Silicon Nanowires for High Conductivity in n- and p-channel Nanowire-FET

Y. Lee ; T. Nagata ; K. Kakushima ; K. Shiraishi ; H. Iwai

Pub. info.:	Solid State (General) - 214th ECS Meeting/PRiME 2008. pp.1-5, 2009. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(40)

Conference Proceedings

2. Power Generation Experiment Of Segmented Planar SOFC

H. Iwai ; M. Saito ; H. Yoshida ; K. Kodani ; K. Yoshikata

Pub. info.:	Fuel Cell Seminar 2007. pp.431-437, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	12(1)

Conference Proceedings

3. Electrical Breakdown and Reliability of Metal Gate - La₂O₃ Thin Films after Post Deposition Annealing in N₂

J. Molina ; K. Tsutsui ; H. Iwai ; K. Kakushima ; N. Sugii ; P. Ahmet

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.757-766, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

Conference Proceedings

4. Power Generation Experiment of Single Planar SOFC with Segmented Electrodes

H. Iwai ; R. Yasutomi ; Y. Okumura ; M. Saito ; H. Yoshida ; K. Kodani ; K. Yoshikata

Pub. info.:	Solid oxide fuel cells 10 (SOFC-X). pp.719-726, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	7(1)

Conference Proceedings

5. Thermal Stability of LaOx/Si Interfacial Transition Layer

H. Nohira ; T. Yoshida ; H. Okamoto ; W. Sakai ; K. Nakajima ; M. Suzuki ; K. Kimura ; N. J. Aun ; Y. Kobayashi ; S. Obmi ; H. Iwai ; E. Ikenaga ; K. Kobayashi ; Y. Takata ; T. Hattori

Pub. info.:	Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5. pp.87-96, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(1)

Conference Proceedings

6. Measurement of topographic phase image of living cells by white-light phase-shifting microscope with active stabilization of optical path difference

T. Yamauchi ; H. Iwai ; M. Miwa ; Y. Yamashita

Pub. info.:	Coherence domain optical methods and optical coherence tomography in biomedicine XI : 22-24 January 2007, San Jose, California, USA. 2007. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	6429

Conference Proceedings

7. High Dielectric Constant Gate Insulator Technology using Rare Earth Oxides

H. Iwai ; S. Ohmi ; S. Akama ; C. Ohshima ; I. Kashiwagi ; A. Kikuchi ; J. Taguchi ; H. Yamamoto ; I. Ueda ; A. Kuriyama ; J. Tonotani ; Y. Kim ; Y. Yoshihara ; H. Ishiwara

Pub. info.:	Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues. pp.27-40, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-28

Conference Proceedings

8. Electrical Characteristics Improvement of DY₂O₃ Thin Films by In-Situ Vacuum Anneal

H. Yamamoto ; J. Taguchi ; S. Ohmi ; H. Iwai

Pub. info.:	Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues. pp.63-74, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-28

Conference Proceedings

9. Stability of High-K Thin Films for Wet Process

A. Kikuchi ; S. Akama ; S. Ohmi ; H. Iwai

Pub. info.:	Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues. pp.157-170, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-28

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Conference Proceedings

10. Characteristics of High-K Gd₂O₃ Films Deposited on Different Orientation of Si Substrate

I. Kashiwagi ; C. Ohshima ; S. Ohmi ; H. Iwai

Pub. info.:	Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues. pp.93-104, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-28

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Author: H. Iwai