1.

Conference Proceedings
Conference Proceedings
1. Real time substrate temperature control by emissivity compensated pyrometry during InxGa1-xAs1-y/InP growth on production scale rotating disc MOVPE reactors
Ramer, J. ; Patel, B. ; Patel, A. ; Boguslavskiy, V. ; Gurary, A.
Pub. info.: New methods, mechanisms and models of vapor deposition : symposium held April 24-26, 2000, San Francisco, California, U.S.A..  pp.15-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 616
2.

Conference Proceedings
Conference Proceedings
2. Emissivity compensated pyrometry of the substrate surface during MOVPE growth of InxGa1-xAs1-yPy/InP materials in rotating dise reactors
Ramer, J. ; Patel, B. ; Patel, A. ; Boguslavskiy, V. ; Gurary, A.
Pub. info.: Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A..  pp.309-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 607
3.

Conference Proceedings
Conference Proceedings
3. A SYNERGISTIC APPROACH TO ENVIRONMENTAL CONCERNS IN LARGE SCALE MOCVD PROCESSES
Thompson, A. G. ; Tompa, G. S. ; Zawadzki, P. A. ; McKee, M. ; Beckham, C. ; Powers, A. ; Gurary, A. ; Moy, K. ; Schumaker, N. E.
Pub. info.: Materials and processes for environmental protection : symposium held April 5-7, 1994, San Francisco, California, U.S.A..  pp.223-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 344
4.

Conference Proceedings
Conference Proceedings
4. The Development of Resistive Heating for the High Temperature Growth of u-SiC using a Vertical CVD Reactor
Eshun, E. ; Taylor, C. ; Fama Diagne, N. ; Griffin, J. ; Spencer, M. G. ; Ferguson, I. ; Gurary, A. ; Stall, R.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.157-160,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. NEW TECHNOLOGY AND DEVELOPMENTS IN COMPOUND SEMICONDUCTOR VERTICAL RDR-MOCVD GROWTH SYSTEMS
McKee, M. ; Tompa, G. S. ; Zawadzki, P. A. ; Thompson, A. ; Gurary, A. ; Beckham, C. ; Schumaker, N. E. ; Moy, K.
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.141-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340
6.

Conference Proceedings
Conference Proceedings
6. DEVELOPMENT AND IMPLEMENTATION OF LARGE AREA, ECONOMICAL ROTATING DISK REACTOR TECHNOLOGY FOR METALORGANIC CHEMICAL VAPOR DEPOSTION
Tompa, G. S. ; Zawadzki, P. A. ; McKee, M. ; Wolak, E. ; Moy, K. ; Stall, R. A. ; Gurary, A. ; Schumaker, N. E.
Pub. info.: Metal-organic chemical vapor deposition of electronic ceramics : Symposium held on November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.241-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 335
7.

Conference Proceedings
Conference Proceedings
7. High Quality P-type GaN and InGaN Epitaxial Growth on C-Sapphire Substrates in a Production Scale Multi-Wafer Rotating Disc MOCVD Reactor
Yuan, C. ; Salagaj, T. ; Gurary, A. ; Thompson, A.G. ; Kroll, W. ; Stall, R.A. ; Schurman, M. ; Hwang, C.-Y ; Li, Y. ; Mayo, W.E. ; Lu, Y. ; Krishnankutty, S. ; Kolbas, R.M. ; Pearton, S.J.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.10-25,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21