1.

Conference Proceedings
Conference Proceedings
1. High barrier height n-GaN schottky diodes with a barrier height of 1.3eV by using sputtered copper metal
Lai, W. C. ; Yokoyama, M. ; Chang, C. Y. ; Guo, J. D. ; Tsang, J. S. ; Chan, S. H. ; Sze, S. M.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.523-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
2.

Conference Proceedings
Conference Proceedings
2. Observation of a Two-Dimensional Electron Gas in the AlGaN/GaN on SiC Substrates
Chi, G. C. ; Lin, C. F. ; Cheng, H. C. ; Huang, J. A. ; Feng, M. S. ; Guo, J. D.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.627-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449