1.

Conference Proceedings
Conference Proceedings
1. A Kinetic Model for GaN Growth
Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L. ; DeSisto, W. J. ; Gorman, R. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.167-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. Enhanced GaN Decomposition at MOVPE Pressures
Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L. ; Twigg, M. E. ; Culbertson, J. C. ; Gorman, R. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.70.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
3.

Conference Proceedings
Conference Proceedings
3. The use of AlN interlayers to improve GaN growth on A-plane sapphire
Koleske, D. D. ; Twigg, M. E. ; Wickenden, A. E. ; Henry, R. L. ; Gorman, R. J. ; Freitas, J. A. Jr. ; Fetami, M.
Pub. info.: Substrate engineering - paving the way to epitaxy : sympoisum held November 29-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.O7.3.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 587