1.

Conference Proceedings
Conference Proceedings
1. Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs
Goodman,S.A. ; Auret,F.D. ; Clerc,Y.Le
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1955-1960,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. Electrical and optical characterisation of defects iuduced in epitaxially grown n-Si during 1 keV noble gas ion bombardment
Deenapanray,P.N.K. ; Auret,F.D. ; Myburg,G. ; Meyer,W.E. ; Goodman,S.A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.565-570,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. Electrical characterization ofelectron beam induced defects in epitaxially grown Si1-xGex
Mamor,M. ; Auret,F.D. ; Goodman,S.A. ; Myburg,G. ; Deenapanray,P.N.K. ; Meyer,W.E.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.115-120,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. Electronic properties of defects introduced in n- and p-type Si1-xGex during ion etching
Goodman,S.A. ; Auret,F.D. ; Mamor,M. ; Deenapanray,P.N.K. ; Meyer,W.E.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.133-138,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
5.

Conference Proceedings
Conference Proceedings
5. Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs
Murtagh,M. ; Hildebrandt,S. ; Herbert,P.A.F. ; O'Connor,G.M. ; Crean,G.M. ; Auret,F.D. ; Goodman,S.A. ; Myburg,G. ; Meyer,W.E.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1961-1966,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
6.

Conference Proceedings
Conference Proceedings
6. Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs
Atsret,F.D. ; Goodman,S.A. ; Meyer,W.E. ; Erasmus,R.M. ; Myburg,G.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.3  pp.1559-1564,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
7.

Conference Proceedings
Conference Proceedings
7. Electrical characterization of defects introduced during plasma-based processing of GaAs
Auret,F.D. ; Goodman,S.A. ; Myburg,G. ; Meyer,W.E. ; Deenapanray,P.N.K. ; Murtagh,M. ; Ye,S.-R. ; Masterson,H.J. ; Beechinor,J.T. ; Crean,G.M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1045-1050,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
8.

Conference Proceedings
Conference Proceedings
8. Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs
Auret,F.D. ; Goodman,S.A. ; Meyer,W.E.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1067-1072,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201