1.

Conference Proceedings
Conference Proceedings
1. Accurate and efficient method for accelerated history effect simulations
Poiroux, T. ; Labourey, G. ; Flatresse, P. ; Faynot, O. ; Belleville, M. ; Souil, D. ; Giffard, B.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.337-342,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
2.

Conference Proceedings
Conference Proceedings
2. Low access resistance ultra-thin SOT MOSFET's with a GOLD structure
Giffard, B. ; Faynot, O.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.471-476,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11
3.

Conference Proceedings
Conference Proceedings
3. Effect of supplemental dose in SIMOX on very high ionizing dose response
Flament, O. ; Paillet, P. ; Leray, J.L. ; Aspar, B. ; Giffard, B. ; Auberton-Herve, A.J.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.381-389,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11
4.

Conference Proceedings
Conference Proceedings
4. Architectures comparison for ultra-thin fully-depleted submicron SOI MOSFErs
Faynot, O. ; Giffard, B. ; Raynaud, C. ; Gautier, J.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.453-458,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11