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Conference Proceedings

1. Variations in the Effects of Implanting Al at Different Concentrations into SiC

Jones, K.A. ; Zheleva, T.S. ; Shah, P.B. ; Derenge, M.A. ; Freitas, J.A. ; Gerardi, G.J. ; Vispute, R.D. ; Hullavard, S. ; Dar, S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.831-834, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. OBSERVATION OF PARAMAGNETIC SILICON DANGLING ORBITALS IN LUMINESCENT POROUS SILICON

Rong, F.C. ; Poindexter, E.H. ; Harvey, J.F. ; Morton, D.C. ; Lux, R.A. ; Gerardi, G.J.

Pub. info.:	Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.167-172, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	283

Conference Proceedings

3. GaAs SURFACE STABILIZATION BY VACUUM ANNEAL WITH SiO

Gerardi, G.J. ; Rong, F.C. ; Poindexter, E.H. ; Harmatz, M. ; Shen, H. ; Warren, W.L.

Pub. info.:	Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A.. pp.601-606, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	284

Conference Proceedings

4. Activating Ion Implants in 4H-SiC by Annealing with An AIN or BN Cap*

Jones, K. ; Shah, P.B. ; Ervin, M.H. ; Deenge, M.A. ; Vispute, R.D. ; Freitas, L.A. ; Gerardi, G.J.

Pub. info.:	State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia. pp.117-122, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-3

Conference Proceedings

5. LOW -TEMPERATURE PECVD Si3N4 FILMS FOR GaAs ENCAPSULATION AND PASSIVATION

Pfeffer, R.L. ; Gerardi, G.J. ; Lux, R.A. ; Jones, K.A. ; Poindexter, E.H. ; Chang, W.H. ; Devine, R.A.B.

Pub. info.:	Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A.. pp.227-232, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	165

Conference Proceedings

6. Contribution of Phi Centers to Nlidgap Interface Trap Density in Oxidized (100) Silicon Wafers

Poindexter, E.H. ; Gerardi, G.J. ; Keeble, D.J.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium. pp.120-127, 1999. Pennington, New Jersey. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-6

Conference Proceedings

7. Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap

Jones, K.A. ; Shah, P.B. ; Derenge, M.A. ; Ervin, M.H. ; Gerardi, G.J. ; Freitas, J.A.,Jr. ; Braga, G.C.B. ; Vispute, R.D. ; Sharma, R.P. ; Holland, O.W.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.819-822, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Hydrogen Speciation in Electronic Silica

Poindexter, E.H. ; Gerardi, G.J. ; Keeble, D.J.

Pub. info.:	The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface. pp.172-183, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-1

Conference Proceedings

9. Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC

Jones, K.A. ; Zheleva, T.S. ; Ervin, M.H. ; Shah, P.B. ; Derenge, M.A. ; Gerardi, G.J. ; Freitas, J.A. ; Vispute, R.D.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.929-932, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap

Jones, K.A. ; Shah, P.B. ; Derenge, M.A. ; Ervin, M.H. ; Gerardi, G.J. ; Freitas, J.A., Jr. ; Braga, G.C.B. ; Vispute, R.D. ; Sharma, R.P. ; Holland, O.W.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.819-822, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Gerardi, G.J.