1.

Conference Proceedings
Conference Proceedings
1. Point Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum States
P.G. Baranov ; V.A. Soltamov ; A.A. Soltamova ; G.V. Astakhov ; V.D. Dyakonov
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.425-430,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Creation and Functionalization of Defects in SiC by Proton Beam Writing
T. Ohshima ; T. Honda ; S. Onoda ; T. Makino ; M. Haruyama ; T. Kamiya ; T. Satoh ; Y. Hijikata ; W. Kada ; O. Hanaizumi ; A. Lohrmann ; J.R. Klein ; B.C. Johnson ; J.C. McCallum ; S. Castelletto ; B.C. Gibson ; H. Kraus ; V. Dyakonov ; G.V. Astakhov
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.233-237,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897