1.

Conference Proceedings
Conference Proceedings
1. Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications
G.S. Sun ; J. Ning ; X.F. Liu ; Y.M. Zhao ; J. Li ; L. Wang ; W.S. Zhao
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.179-182,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection
X.F. Liu ; G.S. Sun ; Y.M. Zhao ; J. Ning ; J.Y. Li ; L. Wang ; W.S. Zhao ; M.C. Luo ; J.M. Li
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.109-112,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. 10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor
L. Dong ; G.S. Sun ; J. Yu ; G.G. Yan ; W.S. Zhao
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.239-242,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
G.S. Sun ; Y.M. Zhao ; L. Wang ; W.S. Zhao
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.147-150,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. Development of Vertical 3×2″ LPCVD System for Fast Epitaxial Growth on 4H-SiC
W.S. Zhao ; G.S. Sun ; H.L. Wu ; G.G. Yan ; L. Zheng
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.105-108,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AIN as a Buffer Layer
Y.M. Zhao ; G.S. Sun ; X.F. Liu ; J.Y. Li ; W.S. Zhao
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.251-254,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
7.

Conference Proceedings
Conference Proceedings
7. Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
X.F. Liu ; G.S. Sun ; J.M. Li ; Y.M. Zhao ; J.Y. Li ; L. Wang ; W.S. Zhao ; M.C. Luo ; Y.P. Zeng
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.387-390,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
8.

Conference Proceedings
Conference Proceedings
8. Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
L. Dong ; G.S. Sun ; J. Yu ; G.G. Yan ; W.S. Zhao
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.354-357,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
9.

Conference Proceedings
Conference Proceedings
9. Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface
Z.W. Shen ; F. Zhang ; S. Dimitrijev ; J.S. Han ; L.X. Tian ; G.G. Yan ; Z.X. Wen ; W.S. Zhao ; L. Wang ; X.F. Liu ; G.S. Sun ; Y.P. Zeng
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.719-722,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897