1.

Conference Proceedings
Conference Proceedings
1. Gate Dielectrics for High Mobility Semiconductors
A. Dimoulas ; Y. Panayiotatos ; P. Tsipas ; S. Galata ; G. Mavrou
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.295-306,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
2.

Conference Proceedings
Conference Proceedings
2. Very High-k Tetragonal ZrO2 on Ge with GeO2 Passivating Interfacial Layer
P. Tsipas ; G. Mavrou ; S.N. Volkos ; A. Sotiropoulos ; S. Galata
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.767-772,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
3.

Conference Proceedings
Conference Proceedings
3. Characterization of Atomic-Beam Deposited GeO₁₋xNx/HfO₂ Stacks on Ge
M. Houssa ; T. Conard ; J. Van Steenbergen ; G. Mavrou ; Y. Panayiotatos ; T. Dimaulas ; M. Meuris ; M. Caymax ; M. Heyns ; G. Nicholas
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.9-16,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)