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12 results

Conference Proceedings

1. Breakdown Characteristics of High-k Gate Dielectrics with Metal Gates

D. Misra ; N. Chowdhury ; G. Bersuker ; C. Young ; R. Choi

Pub. info.:	ULSI process integration 5. pp.143-160, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(6)

Conference Proceedings

2. SURFACE PREPARATION ISSUES ASSOCIATED WITH HIGH-к/METAL GATE DEVICES

J. Bamett ; N. Moumen ; J. J. Peterson ; P. Kirsch ; A. Neugroschel ; G. Bersuker ; H . R. Huff

Pub. info.:	Cleaning Technology in Semiconductor Device Manufacturing IX. pp.43-50, 2006. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(3)

Conference Proceedings

3. Elfect of Deposition Sequence and Plasma Treatment on ALCVD HfO₂ n-MOSFET Properties

C. Lim ; Y. Kim ; A. Hou ; J. Gutt ; S. Marcus ; C. Pomarede ; E. Shero ; H. de Waard ; C. Werkhoven ; L. Chen ; J. Tamim ; N. Chaudhary ; G. Bersuker ; J. Barnett ; C. Young ; P. Zeitzoff ; G. A. Brown ; M. Gardner ; R. W. Murto ; H. R. Huff

Pub. info.:	Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues. pp.83-92, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-28

Conference Proceedings

4. Electrical Characterization Methodologies for the Assessment of High-κ Gate Dielectric Stacks

C.D. Young ; G. Bersuker ; D. Heh ; A. Neugroschel ; R. Choi

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.335-346, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

5. The Influence of NH₃ Anneal on the Crystallization Kinetics of HfO₂ Gate Dielectric Films

P. Lysaght ; J. Bornett ; J. Woicik ; B. Foran ; G. Bersuker ; B. Lee

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.313-322, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

Conference Proceedings

6. Identifying Contributions to Electrical Instability in High-k Gate Stacks: As-Grown vs. Generated Defects

G. Bersuker ; P. Lysaght ; R. Choi

Pub. info.:	Silicon nitride, silicon dioxide, and emerging dielectrics 9. pp.687-704, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	6(3)

Conference Proceedings

7. Polaron-like Charge Trapping in Oxygen Deficient and Disordered HfO₂: Theoretical Insight

J. L. Gavartin ; D. Munos Ramo ; A. Shiuger ; G. Bersuker

Pub. info.:	Physics and technology of high-k gate dielectrics 4. pp.277-290, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(3)

Conference Proceedings

8. Atomic Layer Deposited Hf₂2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability

P. Kirsch ; M. Quevedo-Lopez ; S. Krishnan ; S. Song ; R. Choi ; P. Majhi ; Y. Senzaki ; G. Bersuker ; B. Lee

Pub. info.:	Atomic layer deposition : at the 208th ECS Meeting, October 16-21, 2005, Los Angeles, California, USA. pp.15-28, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(10)

Conference Proceedings

9. Oxygen Vacancies at the Si(001)/SiO₂ Interface

A. Korkin ; J. Greer ; T. M. Hendersen ; G. Bersuker ; R. Bartlett

Pub. info.:	Silicon materials science and technology X. pp.205-212, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	2(2)

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Conference Proceedings

10. Prospect of High-k/Metal Gate Stack Technology for Future CMOS Devices

B. H. Lee ; P. Kirsch ; P. Majhi ; S. Song ; R. Chol ; N. Moumen ; G. Bersuker

Pub. info.:	Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5. pp.29-38, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(1)

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Author: G. Bersuker